型号 SPD04N50C3
厂商 Infineon Technologies
描述 MOSFET N-CH 560V 4.5A DPAK
SPD04N50C3 PDF
代理商 SPD04N50C3
产品培训模块 CoolMOS™ CP High Voltage MOSFETs Converters
标准包装 2,500
系列 CoolMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 560V
电流 - 连续漏极(Id) @ 25° C 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C 950 毫欧 @ 2.8A,10V
Id 时的 Vgs(th)(最大) 3.9V @ 200µA
闸电荷(Qg) @ Vgs 22nC @ 10V
输入电容 (Ciss) @ Vds 470pF @ 25V
功率 - 最大 50W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 带卷 (TR)
其它名称 SP000014479
SP000077609
SP000313945
SPD04N50C3INTR
同类型PDF
SPD04N50C3T Infineon Technologies MOSFET N-CH 560V 4.5A DPAK
SPD04N60C3 Infineon Technologies MOSFET N-CH 650V 4.5A TO-252
SPD04N60C3 Infineon Technologies MOSFET N-CH 650V 4.5A DPAK
SPD04N60C3 Infineon Technologies MOSFET N-CH 650V 4.5A DPAK
SPD04N60S5 Infineon Technologies MOSFET N-CH 600V 4.5A TO-252
SPD04N60S5 Infineon Technologies MOSFET N-CH 600V 4.5A TO-252
SPD04N60S5 Infineon Technologies MOSFET N-CH 600V 4.5A TO-252
SPD04N80C3 Infineon Technologies MOSFET N-CH 800V 4A TO-252
SPD04N80C3 Infineon Technologies MOSFET N-CH 800V 4A TO-252
SPD04N80C3 Infineon Technologies MOSFET N-CH 800V 4A TO-252
SPD04P10P G Infineon Technologies MOSFET P-CH 100V 4A TO252-3
SPD04P10PL G Infineon Technologies MOSFET P-CH 100V 4.2A TO252-3
SPD06N60C3 Infineon Technologies MOSFET N-CH 650V 6.2A TO-252
SPD06N60C3 Infineon Technologies MOSFET N-CH 650V 6.2A TO-252
SPD06N60C3 Infineon Technologies MOSFET N-CH 650V 6.2A TO-252
SPD06N80C3 Infineon Technologies MOSFET N-CH 800V 6A DPAK
SPD06N80C3 Infineon Technologies MOSFET N-CH 800V 6A DPAK
SPD06N80C3 Infineon Technologies MOSFET N-CH 800V 6A DPAK
SPD07N20 Infineon Technologies MOSFET N-CH 200V 7A TO-252
SPD07N20 Infineon Technologies MOSFET N-CH 200V 7A TO-252